Product Model

RJP4005ANS-01-Q1

Introduction

Silicon N Channel IGBT High-Speed Power Switching

Brand and manufacturer

Renesas Technology Corp

Features

Enhanced performance with high-speed switching

Low collector-to-emitter saturation voltage

Built-in fast recovery diode

Product performance

High current handling capability

Improved efficiency due to quick switching and reduced losses

Suitability for high-frequency applications

Technical specifications

Collector-to-emitter voltage: 600V

Collector current: 40A

Gate-emitter voltage: ±30V

Dimensions, shape, and packaging

TO-3P package

Standard IC size and weight for TO-3P

Supplied in tray or tube

Quality and reliability

Highly reliable under extreme conditions

Resistance to thermal and electrical stress

Compliance with Renesas's quality standards

Product advantages

Optimized for energy savings

High-speed operation enhances power efficiency

Ideal for power applications requiring high reliability

Product competitiveness

Competitive pricing for the performance offered

Strong standing in specialized ICs market

Backed by Renesas's track record and support

Compatibility

Designed for use with a variety of drive circuits and gate drivers

Compatible with standard soldering and mounting processes

Standard certification and compliance

Meets industry standard certifications for specialized ICs

Conforms to environmental and safety regulations

Lifespan and sustainability

Long operational life under recommended conditions

Constructed with consideration for environmental impact

Actual application fields

Power supply units

Inverter circuits for motor drives

Induction heating

Uninterruptible Power Supplies (UPS)

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